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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2057
DESCRIPTION *With TO-3PFa package *High voltage,high speed *Built-in damper diode *Wide area of safe operation APPLICATIONS *Horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VEBO IC ICM IB PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Max.operating junction temperature Storage temperature 100 150 -55~150 CONDITIONS Open emitter Open collector VALUE 1500 7 5 20 4 3 W UNIT V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA ;IC=0 IC=5A; IB=1.2A IC=5A; IB=1.2A VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT VF ts tf DC current gain DC current gain Transition frequency Diode forward voltage Storage time IC=5A;IB1=-IB2=1.2A;LLeak=5H Fall time IC=1A ; VCE=5V IC=5A ; VCE=10V IC=1A ; VCE=10V;f=0.5MHz IC=-6A ;IB=0 8 4.5 MIN 7
2SD2057
SYMBOL V(BR)EBO VCEsat VBEsat
TYP.
MAX
UNIT V
8.0 1.5 30 0.3
V V A mA
15 2 -2.3 12 0.8 MHz V s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2057
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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